آیسی IS42S32400F-6BL رم - اورجینال -New and original+گارانتی

آیسی IS42S32400F-6BL رم - اورجینال -New and original+گارانتی

OVERVIEW:
ISSI's  128Mb Synchronous DRAM achieves high-speed data  transfer  using  pipeline  architecture. All  inputs  and  outputs signals refer  to the rising edge of the clock input. The 128Mb SDRAM is  organized in  1Meg x 32 bit x 4 Banks

FEATURES:
Clock frequency: 166, 143, 133 MHz
Fully synchronous; all signals referenced to a positive clock edge
Internal bank   for hiding row access/precharge
Single Power supply: 3.3V + 0.3V
LVTTL interface
Programmable burst length – (1, 2, 4, 8, full page)
Programmable burst sequence:Sequential/Interleave
Auto Refresh (CBR)•  Self Refresh
4096 refresh cycles every 16ms (A2 grade) or 64 ms (Commercial, Industrial, A1 grade)
Random column address every clock cycle
Programmable CAS latency (2, 3 clocks)
Burst read/write and burst read/single write operations capability
Burst termination by burst stop and precharge command

Categories:
    Integrated Circuits (ICs)     
    Memory
Manufacturer:
     ISSI, Integrated Silicon Solution Inc     
Series:
     -     
Packaging:
     Tray      
Part Status:
     Active     
Memory Type:
     Volatile     
Memory Format:
     DRAM     
Technology:
     SDRAM     
Memory Size:
     128Mb (4M x 32)     
Memory Interface:
     Parallel     
Clock Frequency:
     166MHz     
Write Cycle Time - Word, Page:
    -     
Access Time:
    5.4ns     
Voltage - Supply:
     3V ~ 3.6V     
Operating Temperature:
     0°C ~ 70°C (TA)     
Mounting Type:
     Surface Mount     
Package / Case:
     90-TFBGA     
Supplier Device Package:
     90-TFBGA (8x13)