2.7-3.6V 4G(512M X 8) K9F4G08U0B-PCB0 NAND Flash

FEATURES
• Voltage Supply
 - 2.7V Device(K9F4G08B0B) : 2.5V ~ 2.9V
 - 3.3V Device(K9F4G08U0B) : 2.7V ~ 3.6V
• Organization
 - Memory Cell Array : (512M + 16M) x 8bit
 - Data Register : (2K + 64) x 8bit
• Automatic Program and Erase
 - Page Program : (2K + 64)Byte
 - Block Erase : (128K + 4K)Byte
• Page Read Operation
 - Page Size : (2K + 64)Byte
 - Random Read : 25µs(Max.)
 - Serial Access : 25ns(Min.)
• Fast Write Cycle Time
 - Page Program time : 200µs(Typ.)
 - Block Erase Time : 1.5ms(Typ.)
• Command/Address/Data Multiplexed I/O Port
• Hardware Data Protection
 - Program/Erase Lockout During Power Transitions
• Reliable CMOS Floating-Gate Technology
 -Endurance : 100K Program/Erase Cycles(with 1bit/528Byte
ECC)
 - Data Retention : 10 Years
• Command Driven Operation
• Unique ID for Copyright Protection
• Package :
 - K9F4G08B0B-PCB0/PIB0
 48 - Pin TSOP I (12 x 20 / 0.5 mm pitch)
 - K9F4G08U0B-PCB0/PIB0
 48 - Pin TSOP I (12 x 20 / 0.5 mm pitch)
 - K9F4G08U0B-ICB0/IIB0
 52 - Pin ULGA (12 x 17 / 1.00 mm pitch)
 - K9K8G08U1B-ICB0/IIB0
 52 - Pin ULGA (12 x 17 / 1.00 mm pitch)