آیسی NOR Flash K5L2731CAA-D770 - اورجینال -New and original+گارانتی

آیسی K5L2731CAA-D770 - اورجینال -New and original+گارانتی

Part Number: K5L2731CAA-D770
Manufacturer: SAMSUNG
Description:  128Mb NOR Flash + 32Mb UtRAM
Multi-Chip Package  MEMORY128M Bit(8M x16) Page Mode, Multi Bank NOR Flash / 32M Bit(2M x16)  Page Mode Uni-Transistor Random Access Memory

GENERAL DESCRIPTION
The K5L2731CAM is a Multi Chip Package Memory which combines 128Mbit NOR Flash Memory and 32Mbit Page UtRAM.

The NOR Flash featuring single 3.0V power supply, is an 128Mbit NOR-type Flash Memory organized as 8M X16. The memory architecture of the device is designed to divide its memory arrays into 270 blocks with independent hardware protection. This block architecture provides highly flexible erase and program capability. The NOR Flash consists of four banks. This device is capable of reading data from one bank while programming or erasing in the other banks. The NOR Flash offers fast page access time of 20-30ns with random access time of 55-70ns. The device's fast access times allow high speed microprocessors to operate without wait states. The device performs a program operation in unit of 16 bits (Word) and erases in units of a block. Single or multiple blocks can be erased. The block erase operation is completed within typically 0.7 sec. The device requires 15mA as program/erase current in the commercial and industrial temperature ranges.

The 32Mb UtRAM is fabricated by SAMSUNG's advanced CMOS technology using one transistor memory cell. The device support 4 page mode operation, Industrial temperature range and 48 ball Chip Scale Package for user flexibility of system design. The device also supports Internal Temperature Compensated Self Refresh for low standby current
The K5L2731CAM is suitable for the memory of mobile communication system to reduce not only mount area but also power consumption. This device is available in 64-ball FBGA package.


FEATURES
<Common>
• Operating Temperature: -25°C ~ 85°C
• Package: 64Ball FBGA  _ 8.0mm x 11.6mm x 1.2mmt 0.8mm ball pitch

<NOR Flash>
• Single Voltage, 2.7V to 3.6V for Read and Write operations
   Voltage range of 2.7V to 3.1V valid for MCP product
• Organization   8M x16 bit (Word mode Only)
•  Fast Read Access Time  : 55ns
•  Page Mode Operation
    8 Words Page access allows fast asychronous read
    Page Read Access  Time : 20ns
•  Read While Program/Erase Operation
•  Multiple Bank architectures (4 banks)
    Bank 0: 16Mbit (4Kw x 8 and 32Kw x 31)
    Bank 1: 48Mbit (32Kw x 96)
    Bank 2: 48Mbit (32Kw x 96)
    Bank 3: 16Mbit (4Kw x 8 and 32Kw x 31)
•  OTP Block : Extra 256 word
    - 128word for factory and 128word for customer OTP
•  Power Consumption (typical value)
    - Active Read Current : 45mA (@10MHz)
    - Program/Erase Current : 17mA
    - Read While Program or Read While Erase Current : 35mA
    - Standby Mode/Auto Sleep Mode : 15uA  
•  Support Single & Quad word accelerate program
•  WP/ACC input pin
    - Allows special protection of two outermost boot blocks at VIL,
      regardless of block protect status
    - Removes special protection of two outermost boot block at VIH,
      the two blocks return to normal block protect status
    - Reduce program time at VHH : 4us/word
    - Accelerated Quadword Program time : 1.2us
•  Erase Suspend/Resume
•  Program Suspend/Resume
•  Unlock Bypass Program
•  Hardware RESET Pin
•  Command Register Operation
•  Block Protection / Unprotection
•  Supports Common Flash Memory Interface

<UtRAM>
• Process Technology: CMOS
• Organization: 2M x16 bit
• Power Supply Voltage: 2.7~3.1V
• Three State Outputs
• Compatible with Low Power SRAM
• Support 4 page read mode