آیسی W9825G6JH-6 رم - اورجینال -New and original+گارانتی

آیسی W9825G6JH-6 رم - اورجینال -New and original+گارانتی

GENERAL DESCRIPTION:
W9825G6JHis a high-speed synchronous dynamic random access memory (SDRAM), organized as 4M  words x 4  banks  x 16  bits. W9825G6JHdelivers a  data  bandwidth  of  up  to 200M  words  per second (-5). To fully comply with the personal computer industrial standard, W9825G6JHis sorted into the following speed grades: -5, -6, -6Iand -75. The -5is compliant to the 200MHz/CL3 specification. The -6is  compliant  to  the  166MHz/CL3 or  133MHz/CL2 specification. The -6Iis  compliant  to  the 166MHz/CL3  specification(the -6I  grade  which  is  guaranteed  to  support -40°C  ~  85°C).  The -75  is compliant to the 133MHz/CL3 specification.Accesses  to  the  SDRAM  are  burst  oriented.  Consecutive  memory  location  in  one  page  can  be accessed at a burst length of 1, 2, 4, 8 or  full page  when a bank and row is selected by an  ACTIVE command.  Column  addresses  are  automatically  generated  by  the  SDRAM  internal  counter  in  burst operation.  Random  column  read  is  also  possible  by  providing  its  address  at  each  clock  cycle.  The multiple bank nature enables interleaving among internal banks to hide the precharging time.By  having  a  programmable  Mode  Register,  the  system  can  change  burst  length,  latency  cycle, interleave or  sequential  burst to maximize  its performance. W9825G6JHis  ideal for main memory  in high performance applications.

FEATURES:
3.3V +- 0.3V Power Supply
Up to 200MHz Clock Frequency
4,194,304 Words 4 Banks
16 Bits Organization
Self Refresh Mode: Standard and Low Power
CAS Latency: 2 and 3
Burst Length: 1, 2, 4, 8 and Full Page
Burst Read, Single Writes Mode
Byte Data Controlled by LDQM, UDQM
PowerDown Mode
Auto-precharge and Controlled Precharge
8K Refresh Cycles/64 mS
Interface: LVTTL
Packaged in TSOP II 54-pin, 400 mil -0.80, using Lead free materialswith RoHS compliant

Categories:
     Integrated Circuits (ICs)     
    Memory     
Manufacturer:
     Winbond Electronics     
Series:
     -     
Packaging:
     Tape & Reel (TR)      
Part Status:
     Obsolete     
Memory Type:
     Volatile     
Memory Format:
     DRAM     
Technology:
     SDRAM     
Memory Size:
     256Mb (16M x 16)     
Memory Interface:
     Parallel     
Clock Frequency:
     166MHz     
Write Cycle Time - Word, Page:
     -     
Access Time:
     5ns     
Voltage - Supply:
     3V ~ 3.6V     
Operating Temperature:
     0°C ~ 70°C (TA)     
Mounting Type:
     Surface Mount     
Package / Case:
     54-TSOP (0.400", 10.16mm Width)     
Supplier Device Package:
     54-TSOP II