K9F2G08U0C nand flash

K9F2G08U0C
K9F2G08B0B P r e l i m inary
Samsung Confidential
GENERAL DESCRIPTION
FEATURES
• Voltage Supply
- 2.7V device(K9F2G08B0B): 2.50V ~ 2.90V
- 3.3V device(K9F2G08U0B): 2.70V ~ 3.60V
• Organization
- Memory Cell Array : (256M + 8M) x 8bit
- Data Register : (2K + 64) x 8bit
• Automatic Program and Erase
- Page Program : (2K + 64)Byte
- Block Erase : (128K + 4K)Byte
• Page Read Operation
- Page Size : (2K + 64)Byte
- Random Read : 25μs(Max.)
- Serial Access : 25ns(Min.)
256M x 8 Bit NAND Flash Memory
• Fast Write Cycle Time
- Page Program time : 200μs(Typ.)
- Block Erase Time : 1.5ms(Typ.)
• Command/Address/Data Multiplexed I/O Port
• Hardware Data Protection
- Program/Erase Lockout During Power Transitions
• Reliable CMOS Floating-Gate Technology
-Endurance : 100K Program/Erase Cycles(with 1bit/512Byte
ECC)
- Data Retention : 10 Years
• Command Driven Operation
• Unique ID for Copyright Protection
• Package :
- K9F2G08X0C-PCB0/PIB0 : Pb-FREE PACKAGE